GaN Semiconductor Devices Market Dynamics Forecast Analysis and Supply Demand By 2028


The global GaN Semiconductor Devices market size is expected to be worth around US$ 5.86 billion by 2028, according to a new report by Vision Research Reports.

The global GaN Semiconductor Devices market size was valued at US$ 1.46 billion in 2020 and is anticipated to grow at a CAGR of 19.10% during forecast period 2021 to 2028.

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Growth Factors

The market growth can be attributed to the increasing applications of gallium nitride (GaN) in a wide range of semiconductor devices. Additionally, rapid technological advancements in GaN-based semiconductors are also anticipated to promote market growth. The demand for wireless communication devices, primarily in defense communication, is expected to drive the demand. Gallium nitride technology is being widely implemented in the development of amplifiers used in  such as Class E, Class F, and Class C power amplifiers.

Aerospace and defense technology companies such as L3Harris Technologies, Inc.; Northrop Grumman Corporation; and BAE Systems are collaborating with government agencies for incorporating gallium nitride semiconductors in the military and radar applications. For instance, in February 2012, Northrop Grumman Corporation opened its Advanced Technology Laboratory for developing gallium nitride semiconductors for critical military programs. The company, along with the U.S. government, has invested over USD 300 million for developing and integrating GaN semiconductors in military systems for enhancing the capabilities of space, aircraft, and ground defense communication systems. These factors are expected to drive the demand for GaN semiconductors across wireless applications.

Report Highlights

The Opto-semiconductors segment dominated the market in 2020 with a revenue share of over 35%. The segment is expected to witness considerable growth over the forecast period. This can be largely attributed to the application of opto-semiconductors in devices such as LEDs, solar cells, photodiodes, lasers, and optoelectronics. The automotive sector is increasingly utilizing opto-semiconductors in automotive lights, indoor and outdoor lighting, and pulse-powered laser. This is subsequently propelling the adoption of opto-semiconductors in the automotive and consumer electronics industries. Furthermore, opto-semiconductors are also being widely used in applications such as Light Detection and Ranging (LiDAR) and pulsed laser, which bodes well for the segment growth.

The GaN radio frequency devices segment is expected to register a high CAGR over the forecast period. The growth of the segment can be attributed to the increasing use of Gallium nitride radio frequency devices in a wide variety of applications across sectors such as consumer electronics and defense, which are the early adopters in the market. These devices are also used in Improvised Explosive Devices (IEDs) as they offer high performance at moderate costs.

The transistor segment dominated the market in 2020 with a revenue share of over 25%. In recent years, the growing adoption of 4G technology-enabled devices has resulted in the increasing demand for high power GaN-based transistors for base stations used in the telecommunication sector. Compared to silicon-based transistors, GaN-based transistors are more efficient and function at higher power density and switch frequency.

The transistor segment dominated the market in 2020 with a revenue share of over 25%. In recent years, the growing adoption of 4G technology-enabled devices has resulted in the increasing demand for high power GaN-based transistors for base stations used in the telecommunication sector.

The power IC segment is anticipated to record a significant CAGR over the forecast period on account of the increasing use of GaN-based power ICs, which offer features such as efficient navigation, collision avoidance, and real-time air traffic control. Furthermore, the segment growth is propelled by the focus of companies such as Fujitsu Ltd.; Qorvo, Inc.; and Toshiba Corporation on the development of power ICs for telecom applications.

The 4-inch segment dominated the market in 2020 with a market share of over 35.01%. The growth can be attributable to the fact that 4-inch wafers are moderate in size and facilitate the large-scale production of semiconductor devices. The implementation of 4-inch wafers is rapidly increasing as they overcome the limitations of 2-inch wafers and find a wide range of applications in semiconductor product-based industries. Furthermore, the increasing demand for gallium nitride devices with 4-inch wafers in high-power amplifiers, optoelectronics devices, telecom frontends, and high-temperature devices is driving the segment growth. The suitability of a 4-inch substrate for space communication applications, owing to its radiation-hardened properties, is anticipated to be a key factor influencing the market growth.

The 6-inch segment is estimated to expand at a significant CAGR over the forecast period owing to benefits such as uniform voltage supply and precise current control offered by 6-inch wafers. It has wide applications in defense equipment and consumer electronics owing to benefits such as high breakdown voltage and low current leakage. The increasing adoption in commercial applications such as Monolithic Microwave Integrated-Circuit (MMIC) power amplifiers for wireless cellular base stations and automotive collision-avoidance systems bodes well for the segment growth.

The Information and Communication Technology (ICT) segment dominated the market in 2020 with a market share of over 20.01%. The segment growth can be primarily attributed to the increasing adoption of the Internet-of-Things (IoT) technology. IoT devices demand efficient and cost-effective components that facilitate a constant exchange of information. GaN-based semiconductors are expected to suffice low power consumption and high-efficiency requirements for the proper functioning of IoT-enabled products.

The growing use of GaN devices in the defense and aerospace sector can be attributed to the rising need for increased bandwidth and performance reliability in communications, electronic warfare, and radars, among others. The ICs used in radar boards incorporate GaN to enable efficient navigation, facilitate collision avoidance, and enable real-time air traffic control. Additionally, the higher operating frequencies provided by GaN semiconductors makes them suitable for use in radar communication, terrestrial radios, and military jammers. The increasing use of wideband GaN power transistors in amplifiers for software-defined radios is a major factor responsible for the segment growth.

North America dominated the market in 2020 with a market share of over 33%. The growth can be attributed to the increasing investments by the defense and aerospace sector in research and development. The North American government is promoting the adoption of energy-efficient devices and providing contracts to various companies operating in the region. For instance, in March 2015, the U.S. government awarded Raytheon Integrated Defense Systems a contract worth USD 50.9 million to enhance GaN semiconductor manufacturing. The ICT sector in the region has been increasingly adopting GaN semiconductors in radio frequency devices, which bodes well for market growth.

Asia Pacific is expected to emerge as the fastest-growing market over the forecast period, owing to rapid technological advancements that are leading to the increased demand for efficient and high-performance RF components. Countries such as China and Japan are some of the largest manufacturers of consumer electronics, such as LED display devices, smartphones, and gaming consoles. This acts as a key factor in boosting the growth of the regional market.

Key Players

  • Cree, Inc.
  • Efficient Power Conversion Corporation
  • Fujitsu Ltd.
  • GaN Systems
  • Infineon Technologies AG
  • NexGen Power Systems
  • NXP Semiconductor
  • Qorvo, Inc.
  • Texas Instruments Incorporated
  • Toshiba Corporation

Market Segmentation

  • Product Outlook 
    • GaN Radio Frequency Devices
    • Opto-semiconductors
    • Power Semiconductors
  • Component Outlook 
    • Transistor
    • Diode
    • Rectifier
    • Power IC
    • Others
  • Wafer Size Outlook
    • 2-inch
    • 4-inch
    • 6-inch
    • 8-inch
  • End-use Outlook 
    • Automotive
    • Consumer Electronics
    • Defense & Aerospace
    • Healthcare
    • Information & Communication Technology
    • Industrial & Power
    • Others
  • Regional Outlook
    • North America
      • U.S.
      • Canada
    • Europe
      • U.K.
      • Germany
    • Asia Pacific
      • India
      • China
      • Japan
    • Latin America
      • Brazil
    • Middle East & Africa

The study objectives of this report are:

  • To analyze and study the global market capacity, production, value, consumption, status (2017-2020) and forecast (2021-2028);
  • Focuses on the key manufacturers, to study the capacity, production, value, market share and development plans in future.
  • Comprehensive company profiles covering the product offerings, key financial information, recent developments, SWOT analysis, and strategies employed by the major market players
  • To define, describe and forecast the market by type, application and region.
  • To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
  • To identify significant trends and factors driving or inhibiting the market growth.
  • To analyze the opportunities in the market for stakeholders by identifying the high growth segments.
  • To strategically analyze each submarket with respect to individual growth trend and their contribution to the market
  • To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
  • To strategically profile the key players and comprehensively analyze their growth strategies.

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