Gallium Nitride Semiconductor Devices Market Size Grow at US$ 10.42 billion by 2030

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The global Gallium Nitride Semiconductor Devices market size is expected to be worth around US$ 10.42 billion by 2030, according to a new report by Vision Research Reports.

The global Gallium Nitride Semiconductor Devices market size was valued at US$ 3.65 billion in 2020 and is anticipated to grow at a CAGR of 25.5% during forecast period 2021 to 2030.

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Gallium Nitride Semiconductor Devices Market (By Product: GaN Radio Frequency Devices, Opto-semiconductors, Power Semiconductors; By Component: Transistor, Diode, Rectifier, Power IC, Others; By Wafer Size: 2-inch, 4-inch, 6-inch, 8-inch; By End-use: Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Information & Communication Technology, Industrial & Power, Others) – Global Industry Analysis, Size, Share, Growth, Trends, Revenue, Regional Outlook 2021 – 2030

Growth Factors

The growing applications of gallium nitride in a wide variety of semiconductor devices are expected to augment the market growth. Additionally, the rapid technological advancements in the performance of GaN-based semiconductors are anticipated to promote market growth further. The demand for wireless communication devices, primarily in defense communication, is expected to drive the demand for gallium nitride semiconductors. Gallium nitride technology is being increasingly implemented for the development of amplifiers widely used in wireless communication, including Class E, Class F, and Class C power amplifiers.

Various aerospace and defense technology companies such as L3Harris Technologies, Inc.; Northrop Grumman Corporation; and BAE Systems are collaborating with government agencies for incorporating gallium nitride semiconductors in the military and radar applications. For instance, in February 2012, Northrop Grumman Corporation opened its Advanced Technology Laboratory for developing gallium nitride semiconductors for critical military programs. The company, along with the U.S. government, has invested more than USD 300 million for developing and integrating GaN semiconductors in military systems for enhancing the capabilities of space, aircraft, and ground defense communication systems. These factors are expected to drive the demand for GaN semiconductors across wireless applications. 

Report Highlights

The opto-semiconductors product segment dominated the market in 2020 with a revenue share of over 37% and is expected to witness considerable growth over the next eight years. This can be largely attributed to the application of opto-semiconductors in devices such as LEDs, photodiodes, lasers, and optoelectronics, among others. The automotive sector is increasingly utilizing opto-semiconductors in automotive lights, indoor and outdoor lighting, and pulse-powered laser. This is subsequently propelling the adoption of opto-semiconductors in the automotive and consumer electronics industries. Furthermore, opto-semiconductors are also being widely used in applications such as (LiDAR) and pulsed laser, which bodes well for the growth of the segment.

The transistor segment dominated the market in 2020 with a revenue share of over 46%. In recent years, there has been an increasing adoption of GaN-based power transistors adoption of 4G technology-enabled devices has resulted in elevated demand for high power transistors for base stations used in the telecommunication sector. As compared to silicon-based transistors, GaN-based transistors are efficient and functional at high power density and high switch frequency, which has resulted in a higher share of the transistor segment in 2020.

The 4-inch segment dominated the market in 2020 with a revenue share of over 49%, attributable to the fact that 4-inch wafers are and facilitate large scale production of semiconductor devices. The implementations of 4-inch wafers are rapidly increasing as these wafers overcome the limitations of 2-inch wafers and are widely used in semiconductor product-based industries. Furthermore, the increasing demand for gallium nitride devices with 4-inch wafers in high-power amplifiers, optoelectronics devices, telecom frontends, and high-temperature devices is driving the segment growth. Moreover, the suitability of 4-inch substrate for space communication applications owing to its radiation-hardened properties is anticipated to be a key factor influencing the market growth.

The Information and Communication Technology (ICT) end use segment dominated the market in 2020 with a revenue share of over 33%, which can be primarily attributed to the increasing adoption of the (IoT) technology. IoT devices demand efficient and cost-effective components that facilitate a constant exchange of information. They are also used in data centers, servers, base stations, transmission lines, satellite communication, and base transceiver stations, among others.

The growth of defense and aerospace can be attributed to the increasing applications of GaN technology in the defense & aerospace sector to increase the bandwidth and performance reliability in communications, electronic warfare, and radars, among others. The ICs used in radar boards incorporate GaN that enables efficient navigation, facilitate collision avoidance, and enable real-time air traffic control.

North America dominated the market in 2020 with a revenue share of over 43%, as a result of increasing investments by the defense and aerospace industry in research and development are the key drivers for the regional market growth. The governments in the region are promoting the adoption of energy-efficient devices and are providing contracts to various companies operating in the region.

Report Coverage Details
Market Size US$ 10.42 billion by 2030
Growth Rate CAGR of 25.5% From 2021 to 2030
Base Year 2020
Forecast Period 2021 to 2030
Segments Covered Product, Component, Wafer Size, End-use, Region
Companies Mentioned Cree, Inc., Efficient Power Conversion Corporation, Fujitsu Ltd., GaN Systems, Infineon Technologies AG, NexgenPowerSystems, NXP Semiconductor, Qorvo, Inc., Texas Instruments Incorporated, Toshiba Corporation

Key Players

  • Cree, Inc.
  • Efficient Power Conversion Corporation
  • Fujitsu Ltd.
  • GaN Systems
  • Infineon Technologies AG
  • NexgenPowerSystems
  • NXP Semiconductor
  • Qorvo, Inc.
  • Texas Instruments Incorporated
  • Toshiba Corporation

Market Segmentation

  • Product Outlook
    • GaN Radio Frequency Devices
    • Opto-semiconductors
    • Power Semiconductors
  • Component Outlook
    • Transistor
    • Diode
    • Rectifier
    • Power IC
    • Others
  • Wafer Size Outlook
    • 2-inch
    • 4-inch
    • 6-inch
    • 8-inch
  • End-use Outlook
    • Automotive
    • Consumer Electronics
    • Defense & Aerospace
    • Healthcare
    • Information & Communication Technology
    • Industrial & Power
    • Others
  • Regional Outlook
    • North America
      • U.S.
      • Canada
    • Europe
      • U.K.
      • Germany
    • Asia Pacific
      • India
      • China
      • Japan
    • Latin America
      • Brazil
    • Middle East & Africa

The study objectives of this report are:

  • To analyze and study the global market capacity, production, value, consumption, status (2017-2020) and forecast (2021-2030);
  • Focuses on the key manufacturers, to study the capacity, production, value, market share and development plans in future.
  • Comprehensive company profiles covering the product offerings, key financial information, recent developments, SWOT analysis, and strategies employed by the major market players
  • To define, describe and forecast the market by type, application and region.
  • To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
  • To identify significant trends and factors driving or inhibiting the market growth.
  • To analyze the opportunities in the market for stakeholders by identifying the high growth segments.
  • To strategically analyze each submarket with respect to individual growth trend and their contribution to the market
  • To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
  • To strategically profile the key players and comprehensively analyze their growth strategies.

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